IEC 63068-1 Ed. 1.0 en:2019

Posted on: 09/12/202012/20/2019
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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

Product Details

Edition:: 1.0
Published:: 01/30/2019
Number of Pages:: 23
File Size:: 1 file , 5.6 MB

IEC 63171-7 Ed. 1.0 en:2023

Connectors for electrical and electronic equipment – Part 7: Detail specification for up to 7 ways including PE or FE (data/power) and shield pin, free and fixed circular connectors for balanced single-pair data transmission with current-carrying capacity – Mechanical mating information, pin assignment and additional requirements for type 7
standard by International Electrotechnical Commission, 05/01/2023

IEC 62822-3 Ed. 1.0 b:2017

Electric welding equipment – Assessment of restrictions related to human exposure to electromagnetic fields (0 Hz to 300 Hz) – Part 3: Resistance welding equipment
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